BD245D transistor equivalent, silicon npn power transistor.
*Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*Excellent Safe Operating Area
*DC Current Gain-
: hFE>40@IC = 1A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 V(Max)@ IC = 3A
*Designed for Complementary Use with the BD246D
*Minimum Lot-to-Lot variations for robust devic.
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